Commemorative Papers

Silicon nanophotonic devices based on resonance enhancement

[+] Author Affiliations
Zhiping Zhou, Huaming Wu

Peking University, State Key Laboratory of Advanced Optical Communication Systems and Networks, Haidian District, Beijing 100871 China

Junbo Feng

Tsinghua University, Department of Physics, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 China

Jin Hou, Huaxiang Yi, Xingjun Wang

Peking University, State Key Laboratory of Advanced Optical Communication Systems and Networks, Haidian District, Beijing 100871 China

J. Nanophoton. 4(1), 041001 (November 24, 2010). doi:10.1117/1.3527260
History: Received June 30, 2010; Revised November 12, 2010; Accepted November 17, 2010; November 24, 2010; Online November 24, 2010
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Abstract

In recent years, silicon nanophotonic devices have attracted more and more attention due to their compactness, low power consumption, and easy integration with other functions. In addition to the higher index of silicon material providing stronger light confinement, the optical resonance associated with the novel structure design also enhances the performance of nanophotonic devices and offers stronger light-matter interaction. Silicon nanophotonic devices such as polarization beamsplitters, mirrors and reflectors, slow light waveguides, and microring sensors are studied, and all of them demonstrate much better performances due to the incorporated optical resonance enhancement.

© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Zhiping Zhou ; Huaming Wu ; Junbo Feng ; Jin Hou ; Huaxiang Yi, et al.
"Silicon nanophotonic devices based on resonance enhancement", J. Nanophoton. 4(1), 041001 (November 24, 2010). ; http://dx.doi.org/10.1117/1.3527260


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