Special Section: Selected Papers from the 3rd Mediterranean Conference on Nanophotonics

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

[+] Author Affiliations
Bruno Viana

Laboratoire de Chimie de la Matière Condensée de Paris, UMR7574, ENSCP-Chimie-Paristech, 11 Rue P & M, Curie, 75231 Paris cedex 05 France

Oleg Lupan

Laboratoire de Chimie de la Matière Condensée de Paris, UMR7574, ENSCP-Chimie-Paristech, 11 Rue P & M, Curie, 75231 Paris cedex 05 France

Laboratoire d'Électrochimie, Chimie des Interfaces et Modélisation pour l'Énergie, UMR7575, ENSCP-Chimie-Paristech, 11 Rue P & M, Curie, 75231 Paris cedex 05 France

Thierry Pauporté

Laboratoire d'Électrochimie, Chimie des Interfaces et Modélisation pour l'Énergie, UMR7575, ENSCP-Chimie-Paristech, 11 Rue P & M, Curie, 75231 Paris cedex 05 France

J. Nanophoton. 5(1), 051816 (July 08, 2011). doi:10.1117/1.3604783
History: Received January 31, 2011; Revised June 03, 2011; Accepted June 07, 2011; Published July 08, 2011; Online July 08, 2011
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The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Bruno Viana ; Oleg Lupan and Thierry Pauporté
"Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes", J. Nanophoton. 5(1), 051816 (July 08, 2011). ; http://dx.doi.org/10.1117/1.3604783


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