Special Section: Selected Papers from the 3rd Mediterranean Conference on Nanophotonics

Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles

[+] Author Affiliations
Doron Abraham, Asaf Shahmoon, Amihai Meiri, Zeev Zalevsky

Bar-Ilan University, School of Engineering, Ramat-Gan52900, Israel

J. Nanophoton. 5(1), 051825 (November 16, 2011). doi:10.1117/1.3646101
History: Received March 02, 2011; Revised August 18, 2011; Accepted August 22, 2011; Published November 16, 2011; Online November 16, 2011
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The hybrid optically and electrically controllable field effect transistor is a novel device whose current–voltage (IV) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Doron Abraham ; Asaf Shahmoon ; Amihai Meiri and Zeev Zalevsky
"Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles", J. Nanophoton. 5(1), 051825 (November 16, 2011). ; http://dx.doi.org/10.1117/1.3646101


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