Indium nanowires were synthesized by the oblique angle deposition technique, using an e-beam evaporator. The shape of the deposited nanowires changes with the vapor flux angle, and the x-ray diffraction spectrum shows scattering from tetragonal phase indium. Deposition rates ranging from 0.5 to 5 A°/s were used for 200 and 500 nm thick deposits. Nanowires formed at the highest deposition rate and were up to 4.5 μm in length. Raman scattering shows enhanced intensity and optical absorption occurs in the infrared region.