Special Section on Nanophotonics in Japan

Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

[+] Author Affiliations
Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Toshiharu Saiki

Keio University

Masaru Sakai

Kanagawa Academy of Science and Technology

Kazunari Matsuda

Kyoto University

Takashi Ishizuka

Sumitomo Electric Industries

J. Nanophoton. 1(1), 011592 (November 5, 2007). doi:10.1117/1.2816112
History: Received September 20, 2007; Accepted October 18, 2007; November 5, 2007; Online November 05, 2007
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Abstract

The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation.

© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Ryosuke Kubota ; Koji Nakashima ; Dai Mizuno ; Toshiharu Saiki ; Masaru Sakai, et al.
"Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen", J. Nanophoton. 1(1), 011592 (November 5, 2007). ; http://dx.doi.org/10.1117/1.2816112


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