Special Section on Nanophotonics in Japan

Exposure dependence of the developed depth in nonadiabatic photolithography using visible optical near fields

[+] Author Affiliations
Tadashi Kawazoe, Motoichi Ohtsu

University of Tokyo

Yasuhisa Inao, Ryo Kuroda

Canon Inc.

J. Nanophoton. 1(1), 011595 (December 19, 2007). doi:10.1117/1.2833587
History: Received August 29, 2007; Revised December 12, 2007; Accepted December 13, 2007; December 19, 2007; Online December 19, 2007
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Abstract

We have developed new type of photolithography based on a nonadiabatic photochemical process that exposes an ultraviolet-photoresist using a visible optical near field. Investigating the exposure dependence of the developed depth using nonadiabatic photolithography, we found that the depth increased with the exposure threshold. To explain this result, the optical field intensity was simulated by using the finite-difference time-domain method. The evolution of the developed depth was proportional to the optical field intensity and its spatial gradient, agreeing closely with the simulated result that took into account the nonadiabatic processes. Another experimental result is to support our explanation, that in nonadiabatic photolithography, a component of the exposure progresses inside the photoresist.

© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Tadashi Kawazoe ; Motoichi Ohtsu ; Yasuhisa Inao and Ryo Kuroda
"Exposure dependence of the developed depth in nonadiabatic photolithography using visible optical near fields", J. Nanophoton. 1(1), 011595 (December 19, 2007). ; http://dx.doi.org/10.1117/1.2833587


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