Research Papers

Strong broadband optical absorption in silicon nanowire films

[+] Author Affiliations
Loucas Tsakalakos, Joleyn Balch, Jody Fronheiser

GE Global Research

Min-Yi Shih

GE Global Research (now with Opticomp)

Steven F. LeBoeuf

GE Global Research (now with Valencell)

Matthew Pietrzykowski, Peter J. Codella, Bas A. Korevaar

GE Global Research

Oleg V. Sulima

General Electric Energy

Jim Rand

GE Energy - Solar Technologies

Anilkumar Davuluru

General Electric - John F. Welch Technology Center (now with another company)

Umakant Rapol

General Electric - John F. Welch Technology Center

J. Nanophoton. 1(1), 013552 (July 17, 2007). doi:10.1117/1.2768999
History: Received March 30, 2007; Revised July 4, 2007; Accepted July 9, 2007; July 17, 2007; Online July 17, 2007
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Abstract

The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found to be higher than solid thin films of equivalent thickness. The observed behavior is adequately explained by light scattering and light trapping though some of the observed absorption is due to a high density of surface states in the nanowires films, as evidenced by the partial reduction in high residual sub-bandgap absorption after hydrogen passivation. Finite difference time domain simulations show strong resonance within and between the nanowires in a vertically oriented array and describe the experimental absorption data well. These structures may be of interest in optical films and optoelectronic device applications.

© 2007 Society of Photo-Optical Instrumentation Engineers

Topics

Absorption ; Silicon

Citation

Loucas Tsakalakos ; Joleyn Balch ; Jody Fronheiser ; Min-Yi Shih ; Steven F. LeBoeuf, et al.
"Strong broadband optical absorption in silicon nanowire films", J. Nanophoton. 1(1), 013552 (July 17, 2007). ; http://dx.doi.org/10.1117/1.2768999


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