Special Section on Nanophotonics for Communications

Luminescence of black silicon

[+] Author Affiliations
Ali Serpenguzel, Adnan Kurt

Koc¸ University, Rumelifeneri Yolu, Istanbul, Sariyer 34450 Turkey

Ibrahim Inanc¸

Material Science and Engineering Department, Sabanci University, Orhanli, Tuzla, Istanbul, 34956 Turkey

James Carey

SiOnyx Incorporated, 100 Cummings Center, Beverly, Massachusetts 01915

Eric Mazur

Department of Physics, Harvard University, Division of Engineering and Applied Sciences, Cambridge, Massachusetts 02138

J. Nanophoton. 2(1), 021770 (February 21, 2008). doi:10.1117/1.2896069
History: Received July 15, 2007; Revised February 20, 2008; Accepted February 20, 2008; February 21, 2008; Online February 21, 2008
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Abstract

Room temperature visible and near-infrared photoluminescence from black silicon has been observed. The black silicon is manufactured by shining femtosecond laser pulses on silicon wafers in air, which were later annealed in vacuum. The photoluminescence is quenched above 120 K due to thermalization and competing nonradiative recombination of the carriers. The photoluminescence intensity at 10K depends sublinearly on the excitation laser intensity confirming band tail recombination at the defect sites.

© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Ali Serpenguzel ; Adnan Kurt ; Ibrahim Inanc¸ ; James Carey and Eric Mazur
"Luminescence of black silicon", J. Nanophoton. 2(1), 021770 (February 21, 2008). ; http://dx.doi.org/10.1117/1.2896069


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