Special Section on Nanophotonics for Communications

Heteroepitaxial growth dynamics of InP nanowires on silicon

[+] Author Affiliations
Ataur Sarkar

Electrical and Computer, University of California, 1 Shields Avenue, Davis, CA 95616

Ibrahim Kimukin

Electrical and Computer, Carnegie Mellon University, Pittsburg, PA 15213

Christopher W. Edgar

Electrical and Computer, University of California, 1 Shields Avenue, Davis, CA 95616

Sungsoo Yi

Advanced Laboratories, Philips Lumileds Lighting Company, San Jose, CA 95131

M. Saif Islam

Electrical and Computer, University of California, 1 Shields Avenue, Davis, CA 95616

J. Nanophoton. 2(1), 021775 (February 12, 2008). doi:10.1117/1.2839443
History: Received August 17, 2007; Revised December 17, 2007; Accepted January 2, 2008; February 12, 2008; Online February 12, 2008
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Abstract

Highly lattice mismatched InP/Si nanowire heterostructures were synthesized using metal organic chemical vapor deposition (MOCVD) process at 450 ºC. The InP nanowire diameter as high as 500 nm is much thicker than the critical diameter (~24 nm for InP/Si) predicted by a recent theoretical work on the coherent growth of nanowire heterostructures. We investigated possible factors that lead to the unusually large diameters in a highly lattice mismatched material system. Dislocations formed at the interfacial plane of the heterostructure due to high lattice mismatch were found to contribute to the growth of nanowires with very large diameters. An extra pair of dislocation lines at the interfacial plane was found to support an increase in nanowire diameter by ~12 nm.

© 2008 Society of Photo-Optical Instrumentation Engineers

Topics

Nanofibers ; Silicon

Citation

Ataur Sarkar ; Ibrahim Kimukin ; Christopher W. Edgar ; Sungsoo Yi and M. Saif Islam
"Heteroepitaxial growth dynamics of InP nanowires on silicon", J. Nanophoton. 2(1), 021775 (February 12, 2008). ; http://dx.doi.org/10.1117/1.2839443


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