Special Section: Selected Papers from the 4th Mediterranean Conference on Nanophotonics

Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

[+] Author Affiliations
Tamara Funda Gundogdu

Bilkent University, Nanotechnology Research Center—NANOTAM, Bilkent, 06800 Ankara, Turkey

Mutlu Gökkavas

Bilkent University, Nanotechnology Research Center—NANOTAM, Bilkent, 06800 Ankara, Turkey

Ekmel Ozbay

Bilkent University, Nanotechnology Research Center—NANOTAM, Bilkent, 06800 Ankara, Turkey

J. Nanophoton. 6(1), 061603 (Jul 26, 2012). doi:10.1117/1.JNP.6.061603
History: Received April 4, 2012; Revised July 5, 2012; Accepted July 5, 2012
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Abstract.  We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Tamara Funda Gundogdu ; Mutlu Gökkavas and Ekmel Ozbay
"Absorption enhancement in InGaN-based photonic crystal-implemented solar cells", J. Nanophoton. 6(1), 061603 (Jul 26, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.061603


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