Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

Tamara F. Gundogdu; Mutlu Gökkavas; Ekmel Özbay

doi:10.1117/1.JNP.6.061603

26 July 2012 Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

Tamara F. Gundogdu, Mutlu Gökkavas, Ekmel Özbay

Author Affiliations +

Journal of Nanophotonics, Vol. 6, Issue 1, 061603 (July 2012). https://doi.org/10.1117/1.JNP.6.061603

Abstract

We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized.

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Tamara F. Gundogdu, Mutlu Gökkavas, and Ekmel Özbay "Absorption enhancement in InGaN-based photonic crystal-implemented solar cells," Journal of Nanophotonics 6(1), 061603 (26 July 2012). https://doi.org/10.1117/1.JNP.6.061603

Published: 26 July 2012

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