Errata

Publisher’s Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

[+] Author Affiliations
Azzouz Sellai

Sultan Qaboos University, Physics Department, 123 Muscat, Oman

Piotr Kruszewski

Institute of Physics Polish Academy of Sciences, 02-668 Warsaw, Poland

Aix-Marseille University, IM2NP, UMR 6242 CNRS, 13397 Marseille Cedex 20, France

Abdelmadjid Mesli

Aix-Marseille University, IM2NP, UMR 6242 CNRS, 13397 Marseille Cedex 20, France

Anthony R. Peaker, Mohamed Missous

University of Manchester, Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, United Kingdom

J. Nanophoton. 6(1), 060103 (Jul 02, 2012). doi:10.1117/1.JNP.6.060103
History:
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Open Access Open Access

This article was originally published in Vol. 6 of the Journal of Nanophotonics on 24 February 2012 in the wrong section of the table of contents and with an incorrect citation identifier (CID) of 013502. The paper was removed and republished online with the correct CID of 063502 on 8 March 2012. This change was made in order for the paper to appear under the correct section heading, “Research Papers.”

For more information on the use of CIDs in JNP, see http://spiedigitallibrary.org/jnp/citation_format.

© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Azzouz Sellai ; Piotr Kruszewski ; Abdelmadjid Mesli ; Anthony R. Peaker and Mohamed Missous
"Publisher’s Note: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy", J. Nanophoton. 6(1), 060103 (Jul 02, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.060103


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