Research Papers

Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

[+] Author Affiliations
Azzouz Sellai

Sultan Qaboos University, Physics Department, 123 Muscat, Oman

Piotr Kruszewski

Institute of Physics Polish Academy of Sciences, 02-668 Warsaw, Poland

Aix-Marseille University, IM2NP, UMR 6242 CNRS, 13397 Marseille Cedex 20, France

Abdelmadjid Mesli

Aix-Marseille University, IM2NP, UMR 6242 CNRS, 13397 Marseille Cedex 20, France

Anthony R. Peaker

University of Manchester, Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, United Kingdom

Mohamed Missous

University of Manchester, Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, United Kingdom

J. Nanophoton. 6(1), 063502 (Feb 24, 2012). doi:10.1117/1.JNP.6.063502
History: Received September 2, 2011; Revised October 24, 2011; Accepted December 27, 2011
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Abstract.  GaAs based structures in which are embedded InAs self-assembled quantum dots are studied using admittance measurements taken over a large frequency spectrum and for several temperatures. The presence of quantum dots is evidenced in the capacitance-voltage characteristics by one, or more, plateau-like structures related to the processes of charging and discharging of the quantum dots. Concurrently, the measured conductance exhibits a peak in a certain bias range that coincides with the plateau-like structure in the capacitance but only for temperatures below 150 K. The conductance dependence on both the temperature and applied bias is attributed to two mechanisms of carrier escape/capture mechanisms from the InAs embedded quantum dots into/out of the hosting GaAs; a thermally activated process for temperatures above 80 K and a perceptibly nonthermal tunneling process for temperatures below 40 K. The conductance data is used to estimate rates and activation energies in association with the electron escape mechanisms from the quantum dots.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Azzouz Sellai ; Piotr Kruszewski ; Abdelmadjid Mesli ; Anthony R. Peaker and Mohamed Missous
"Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy", J. Nanophoton. 6(1), 063502 (Feb 24, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.063502


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