Research Papers

Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities

[+] Author Affiliations
Swati Rawal, Ravindra K. Sinha

Delhi Technological University (Formerly Delhi College of Engineering), TIFAC-Centre of Relevance and Excellence in Fiber Optics and Optical Communication, Department of Applied Physics, Bawana Road, Delhi-110042, India

Richard M. De La Rue

University of Malaya, Photonics Research Centre, Physics Department, Science Faculty, 50603 Kuala Lumpur, Malaysia

University of Glasgow, Optoelectronics Research Group, School of Engineering, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, Scotland, United Kingdom

J. Nanophoton. 6(1), 063504 (Mar 12, 2012). doi:10.1117/1.JNP.6.063504
History: Received September 28, 2011; Revised November 23, 2011; Accepted November 30, 2011
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Abstract.  The effects of the slow-down factor on third-order nonlinear effects in silicon-on-insulator photonic crystal channel waveguides were investigated. In the slow light regime, with a group index equal to 99, these nonlinear effects are enhanced but the enhancement produced depends on the input peak power level. Simulations indicate the possibility of soliton-like propagation of 1 ps pulses at an input peak power level of 50 mW inside such a photonic crystal waveguide. The increase in the induced phase shift produced by lower group velocities can be used to decrease the size and power requirements needed to operate devices such as optical switches, logic gates, and wavelength translators.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Swati Rawal ; Ravindra K. Sinha and Richard M. De La Rue
"Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities", J. Nanophoton. 6(1), 063504 (Mar 12, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.063504


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