Research Papers

Al-doped ZnO aligned nanorod arrays: significant implications for optic and opto-electronic applications

[+] Author Affiliations
Terence Holloway, Rajeh Mundle, Hareesh Dondapati, Messaoud Bahoura, Aswini K. Pradhan

Norfolk State University, Center for Materials Research, 700 Park Avenue, Norfolk, Virginia 23504

J. Nanophoton. 6(1), 063507 (Apr 26, 2012). doi:10.1117/1.JNP.6.063507
History: Received November 30, 2011; Revised March 2, 2012; Accepted March 12, 2012
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Abstract.  We investigated the optical and optoelectronic properties of vertically aligned Al:ZnO nanorod arrays synthesized by the hydrothermal technique at a considerably low temperature on a sputtered Al:ZnO seed layer. The nanorod arrays maintained remarkable alignment along the c-axis over a large area. The seed layers and nanorod arrays showed various optical band gaps. Investigation of the optoelectronic properties of nanorod arrays on Al:ZnO/p-Si seed layer with SiO2 revealed that the photocurrent is significantly reduced in nanorod arrays on a AZO/SiO2/p-Si heterojunction due to multiple scattering phenomena associated with nanorod arrays. This research may open up venues for various optical and opto-electronic applications where highly aligned nanostructures are desired.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Terence Holloway ; Rajeh Mundle ; Hareesh Dondapati ; Messaoud Bahoura and Aswini K. Pradhan
"Al-doped ZnO aligned nanorod arrays: significant implications for optic and opto-electronic applications", J. Nanophoton. 6(1), 063507 (Apr 26, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.063507


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