25 September 2012 Multilayer photonic logic gate integrated into microelectronic chip
Amihai Meiri, Shai Tzur, Yosi Cohen, Ori Bass, Alexander Fish, Zeev Zalevsky
Author Affiliations +
Abstract
An all-optical XOR gate was designed to take advantage of the previously unused silicon dioxide (SiO2) interconnect layers in a microelectronic chip. The device relies on the coupling of modes between parallel waveguides and the interaction of the modes with the metal interconnects of a silicon chip to obtain a phase difference between input arms. When the signals from the two input arms interfere, the result is a logic XOR operation due to the phase difference. The design was numerically implemented, and a contrast of 18.7 dB was obtained with a 13.2-μm-long logic gate.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Amihai Meiri, Shai Tzur, Yosi Cohen, Ori Bass, Alexander Fish, and Zeev Zalevsky "Multilayer photonic logic gate integrated into microelectronic chip," Journal of Nanophotonics 6(1), 061607 (25 September 2012). https://doi.org/10.1117/1.JNP.6.061607
Published: 25 September 2012
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Metals

Silicon

Microelectronics

Logic devices

Refractive index

Photonic crystals

RELATED CONTENT


Back to Top