Special Section: Selected Papers from the 4th Mediterranean Conference on Nanophotonics

Multilayer photonic logic gate integrated into microelectronic chip

[+] Author Affiliations
Amihai Meiri

Bar-Ilan University, Faculty of Engineering, Ramat-Gan, 52900, Israel

Shai Tzur

Bar-Ilan University, Faculty of Engineering, Ramat-Gan, 52900, Israel

Yosi Cohen

Bar-Ilan University, Faculty of Engineering, Ramat-Gan, 52900, Israel

Ori Bass

Ben-Gurion University, The VLSI Systems Center, ECE Department, Beer Sheva, Israel

Alexander Fish

Ben-Gurion University, The VLSI Systems Center, ECE Department, Beer Sheva, Israel

Zeev Zalevsky

Bar-Ilan University, Faculty of Engineering, Ramat-Gan, 52900, Israel

J. Nanophoton. 6(1), 061607 (Sep 25, 2012). doi:10.1117/1.JNP.6.061607
History: Received February 28, 2012; Revised August 25, 2012; Accepted August 27, 2012
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Abstract.  An all-optical XOR gate was designed to take advantage of the previously unused silicon dioxide (SiO2) interconnect layers in a microelectronic chip. The device relies on the coupling of modes between parallel waveguides and the interaction of the modes with the metal interconnects of a silicon chip to obtain a phase difference between input arms. When the signals from the two input arms interfere, the result is a logic XOR operation due to the phase difference. The design was numerically implemented, and a contrast of 18.7 dB was obtained with a 13.2-μm-long logic gate.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Amihai Meiri ; Shai Tzur ; Yosi Cohen ; Ori Bass ; Alexander Fish, et al.
"Multilayer photonic logic gate integrated into microelectronic chip", J. Nanophoton. 6(1), 061607 (Sep 25, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.061607


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