Research Papers

Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy

[+] Author Affiliations
Hiroki Tojinbara, Motoki Takahashi, Nobuhiro Tsumori, Dai Mizuno, Ryosuke Kubota, Toshiharu Saiki

Keio University, Graduate school of Science and Technology, Hiyoshi, Kohoku, Yokohama, Japan

Yoshiki Sakuma

National Institute for Materials Science, Namiki, Tsukuba, Ibaraki, Japan

J. Nanophoton. 6(1), 063521 (Oct 16, 2012). doi:10.1117/1.JNP.6.063521
History: Received March 15, 2012; Revised August 15, 2012; Accepted September 21, 2012
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Abstract.  Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Hiroki Tojinbara ; Motoki Takahashi ; Nobuhiro Tsumori ; Dai Mizuno ; Ryosuke Kubota, et al.
"Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy", J. Nanophoton. 6(1), 063521 (Oct 16, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.063521


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