22 November 2012 Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides
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Abstract
We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9  dB/cm for the quasi-transverse magnetic mode. To assess the potential of this device as a sensor, we simulated the confinement factor in the slot. This simulation revealed that SiC-based slot waveguides can be used, advantangeously, for sensing as the confinement strongly varies with the refractive index of the slot material. A confinement factor change of 0.15/refractive index units was measured for different slot materials.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Gregory Pandraud, Eduardo Margallo-Balbas, and Pasqualina M. Sarro "Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides," Journal of Nanophotonics 6(1), 063530 (22 November 2012). https://doi.org/10.1117/1.JNP.6.063530
Published: 22 November 2012
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Cited by 1 scholarly publication.
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KEYWORDS
Waveguides

Silicon carbide

Refractive index

Plasma enhanced chemical vapor deposition

Biological and chemical sensing

Silicon

Oxides

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