Research Papers

Photon absorption coefficient (α) for a low-dimensional CdS/CdTe absorber by a partial k-selection approach

[+] Author Affiliations
José R. Villa-Angulo

Autonomous University of Baja California, Institute of Engineering, s/n De la Normal Avenue, Insurgentes, Mexicali, B.C. 21280, Mexico

Rafael Villa-Angulo

Autonomous University of Baja California, Institute of Engineering, s/n De la Normal Avenue, Insurgentes, Mexicali, B.C. 21280, Mexico

Carlos Villa-Angulo

Autonomous University of Baja California, Institute of Engineering, s/n De la Normal Avenue, Insurgentes, Mexicali, B.C. 21280, Mexico

J. Nanophoton. 7(1), 073099 (Jan 10, 2013). doi:10.1117/1.JNP.7.073099
History: Received October 2, 2012; Revised December 17, 2012; Accepted December 17, 2012
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Abstract.  The dependence of photon absorption by a low-dimensional cadmium-sulfide/cadmium-telluride (CdS/CdTe) heterostructured absorber on the thickness and number of CdTe active layers is investigated. The equation for the photon absorption coefficient (α) used is based on the partial momentum k-selection approach. Theoretical results show that absorption greater than 4×104cm1 is obtained when the thickness of the active layer reaches 50 Å. Similarly, with each additional CdTe active layer in the heterostructured absorber, a relative increase of 0.5×104cm1 in photon absorption is achieved. The relation between photoelectric quantum efficiency and photon absorption is determined by the number and thickness of the CdTe active layers in the heterostructured absorber. A quantum efficiency greater than 0.9 is obtained using 15 active layers with a thickness of 50 Å.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

José R. Villa-Angulo ; Rafael Villa-Angulo and Carlos Villa-Angulo
"Photon absorption coefficient (α) for a low-dimensional CdS/CdTe absorber by a partial k-selection approach", J. Nanophoton. 7(1), 073099 (Jan 10, 2013). ; http://dx.doi.org/10.1117/1.JNP.7.073099


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