Electric conduction in structures containing fullerenes was simulated. The electric current was calculated as a function of the bias voltage using the Landauer approach, thereby connecting charge transport with the transmission of electrons. To obtain the transmission matrix components, the supplementary problem of the electron scattering by the model potential was solved. Three types of structures were considered: a single fullerene molecule, a dimer of fullerenes, and a cluster of eight fullerenes. The current-voltage characteristics of these structures may have negative-conductance regions which make it possible to use them as active components of nanoelectronic devices.