The performance of short-wavelength infrared (SWIR) cameras in the visible and ultraviolet (UV) regions is limited by the absorption of high-energy photons in inactive regions of the imaging array. Dual-band UV-SWIR imaging can be achieved by using PbS colloidal quantum dots (CQD) to downshift incident UV light to the SWIR band. The CQD downshifting layer has minimal impact on the SWIR imaging performance and greatly increases the UV sensitivity of an InGaAs camera. A dual-lens design in which the QDs are incorporated on a removable substrate is demonstrated, which provides UV sensitivity without modification of the InGaAs camera focal plane array. A single-lens design in which the QDs are deposited directly on the focal plane array is demonstrated using both a standard InGaAs focal plane and a substrate-thinned focal plane. Higher UV resolution for the substrate-thinned focal plane is observed.