Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology

Kaikai Xu; Guannpyng Li

doi:10.1117/1.JNP.7.073082

4 October 2013 Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology

Kaikai Xu, Guannpyng Li

Author Affiliations +

Journal of Nanophotonics, Vol. 7, Issue 1, 073082 (October 2013). https://doi.org/10.1117/1.JNP.7.073082

Abstract

A silicon light-emitting device is designed and realized in standard 3-μm complementary metal oxide semiconductor (CMOS) integrated circuitry. Accordingly, it can be integrated with its signal processing CMOS and BiCMOS circuits on the same chip, thus enabling the fabrication of much needed all-silicon monolithic optoelectronic systems operated by a single supply. The device emitted light in a broad, bell-shaped spectrum from 500 to 850 nm with characteristic peaks at 650 and 750 nm. Initial investigations indicate that the quantum efficiency is of the order of 10 ⁻⁸ and the electric-to-optical power conversion efficiency is of the order of 10 ⁻⁹ . This silicon light-emitting device has obvious applications in the electro-optical interconnect.

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Kaikai Xu and Guannpyng Li "Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology," Journal of Nanophotonics 7(1), 073082 (4 October 2013). https://doi.org/10.1117/1.JNP.7.073082

Published: 4 October 2013

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