Research Papers

Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

[+] Author Affiliations
Michael G. Wood

Ohio State University, Department of Electrical and Computer Engineering, Electroscience Laboratory, 2015 Neil Avenue, Columbus, Ohio 43210

Li Chen

Ohio State University, Department of Electrical and Computer Engineering, Electroscience Laboratory, 2015 Neil Avenue, Columbus, Ohio 43210

Justin R. Burr

Ohio State University, Department of Electrical and Computer Engineering, Electroscience Laboratory, 2015 Neil Avenue, Columbus, Ohio 43210

Ronald M. Reano

Ohio State University, Department of Electrical and Computer Engineering, Electroscience Laboratory, 2015 Neil Avenue, Columbus, Ohio 43210

J. Nanophoton. 8(1), 083098 (Jan 03, 2014). doi:10.1117/1.JNP.8.083098
History: Received October 17, 2013; Revised December 3, 2013; Accepted December 4, 2013
Text Size: A A A

Abstract.  We carried out a multiparameter fabrication study designed to reduce the line edge roughness (LER) of electron beam (e-beam) patterned hydrogen silsesquioxane resist for the purpose of producing low-loss silicon strip waveguides. Reduced mask roughness was achieved for 50°C pre-exposure baking, 5000μC/cm2 dose with a beam spot size more than twice as large as the electron beam step size, development in 25% tetramethylammonium hydroxide and postdevelopment baking with rapid thermal annealing in an O2 ambient at 1000°C. The LER caused by pattern fracturing and stage stitches was reduced with multipass writing and per-pass linear and rotational offsets. Si strip waveguides patterned with the optimized mask have root-mean-square sidewall roughness of 2.1 nm with a correlation length of 94 nm, as measured by three-dimensional atomic force microscopy. Measured optical propagation losses of these waveguides across the telecommunications C-band were 2.5 and 2.8dB/cm for the transverse magnetic and transverse electric modes, respectively. These reduced loss waveguides enable the fabrication of advanced planar lightwave circuit topologies.

Figures in this Article
© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Michael G. Wood ; Li Chen ; Justin R. Burr and Ronald M. Reano
"Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides", J. Nanophoton. 8(1), 083098 (Jan 03, 2014). ; http://dx.doi.org/10.1117/1.JNP.8.083098


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.