Research Papers

SiOx nanodots as a ‘green gap’ solution

[+] Author Affiliations
Aniruddha Mondal

National Institute of Technology Durgapur, Department of Physics, Durgapur 713209, India

National Institute of Technology, Department of Electronics and Communication Engineering, Agartala 799046, India

Bikram Kishore Mahajan

National Institute of Technology, Department of Electronics and Communication Engineering, Agartala 799046, India

University of Missouri, Department of Electrical and Computer Engineering, Columbia 65211, United States

Bijit Choudhuri

National Institute of Technology, Department of Electronics and Communication Engineering, Agartala 799046, India

Ajitabh Kumar Tiwari

National Institute of Technology, Department of Electronics and Communication Engineering, Agartala 799046, India

Santanu Chakrabarty

Tripura University, Department of Physics, Suryamaninagar 799022, India

Kalyan Kumar Chattopadhyay

Jadavpur University, Department of Physics, Kolkata 700032, India

J. Nanophoton. 8(1), 083069 (Dec 22, 2014). doi:10.1117/1.JNP.8.083069
History: Received July 18, 2014; Accepted November 19, 2014
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Abstract.  We have synthesized SiOx nanodots (NDs) on a TiO2 dielectric using a glancing angle deposition technique. The SiOx NDs were 11 to 22 nm in diameter, which was confirmed by atomic force microscopy image. A green light emission (550 nm) was observed from SiOx NDs when excited with a xenon lamp of wavelength 322 nm. The emission was redshifted (6nm) when the excitation was changed to 325 nm. The SiOx NDs-based detector showed a very low leakage current of 9nA (0.05V) and responded to the green light at 550 nm.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Aniruddha Mondal ; Bikram Kishore Mahajan ; Bijit Choudhuri ; Ajitabh Kumar Tiwari ; Santanu Chakrabarty, et al.
"SiOx nanodots as a ‘green gap’ solution", J. Nanophoton. 8(1), 083069 (Dec 22, 2014). ; http://dx.doi.org/10.1117/1.JNP.8.083069


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