Research Papers

Broadband and omnidirectional antireflection of SiN composite nanostructures–decorated Si surface for highly efficient Si solar cells

[+] Author Affiliations
Zhen Zhang, Yanyan Wang

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Division of Nanodevices and Related Materials, 398 Ruoshui Road, Suzhou 215123, China

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Key Labs of Nanodevices and Applications, 398 Ruoshui Road, Suzhou 215123, China

Soochow University, College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, 1 Shizi Street, Suzhou 215006, China

Soochow University, Key Laboratory of Thin Films of Jiangsu, 1 Shizi Street, Suzhou 215006, China

Jian Zhu

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Division of Nanodevices and Related Materials, 398 Ruoshui Road, Suzhou 215123, China

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Key Labs of Nanodevices and Applications, 398 Ruoshui Road, Suzhou 215123, China

Xuemei Wu

Soochow University, College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, 1 Shizi Street, Suzhou 215006, China

Soochow University, Key Laboratory of Thin Films of Jiangsu, 1 Shizi Street, Suzhou 215006, China

Ruiying Zhang

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Division of Nanodevices and Related Materials, 398 Ruoshui Road, Suzhou 215123, China

Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Key Labs of Nanodevices and Applications, 398 Ruoshui Road, Suzhou 215123, China

Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Functional Materials for Informatics, 865 Changning Road, Shanghai 200050, China

J. Nanophoton. 9(1), 093075 (Apr 28, 2015). doi:10.1117/1.JNP.9.093075
History: Received December 8, 2014; Accepted April 1, 2015
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Abstract.  SiN composite nanostructures (CNs), composed of SiN nanorods and the underlying SiN film, are formed on Si substrate through SiN deposition, nanosphere lithography, and dry etching. The antireflection performance of Si samples decorated by the SiN CNs with different morphology is experimentally investigated. All the SiN CNs decorated Si samples exhibit antireflection over 300 to 1000 nm and a wide view. Their antireflection performance varies with the height of the nanorods (H) and the thickness of the underneath film (T). A reflectivity of less than 10% over 300 to 1000 nm and an incident angle of 8 deg and 65 deg are achieved in the optimal antireflection structures with H=240nm, T=750nm and H=500nm, T=300nm, respectively. Furthermore, antireflection behavior in the SiN CNs decorated Si sample with H=500nm, T=300nm is compared with that in Si samples decorated by 565- and 60-nm thick SiN film. A weighted reflectance of about 5% is achieved in an SiN CNs decorated Si sample in any incident angle, which is much lower than that in any SiN film coated Si sample. Moreover, such a performance is beyond the limitation of interface reflectivity of Si and SiN materials, and should benefit Si solar cells to simultaneously enhance the absorption and surface passivation.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Zhen Zhang ; Yanyan Wang ; Jian Zhu ; Xuemei Wu and Ruiying Zhang
"Broadband and omnidirectional antireflection of SiN composite nanostructures–decorated Si surface for highly efficient Si solar cells", J. Nanophoton. 9(1), 093075 (Apr 28, 2015). ; http://dx.doi.org/10.1117/1.JNP.9.093075


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