Research Papers

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

[+] Author Affiliations
Ahmed Fadil, Yiyu Ou, Weifang Lu, Paul Michael Petersen, Haiyan Ou

Technical University of Denmark, DTU Fotonik, Ørsteds Plads 343, 2800 Kongens Lyngby, Denmark

Teng Zhan, Zhiqiang Liu

Chinese Academy of Sciences, Institute of Semiconductors, A35 Qinghua East Road, Haidian, Beijing 100083, China

Kaiyu Wu

Technical University of Denmark, DTU Nanotech, Ørsteds Plads 345, 2800 Kongens Lyngby, Denmark

Dmitry Suyatin

Lund University, Division of Solid State Physics and The Nanometer Structure Consortium, Box 118, SE-22100 Lund, Sweden

J. Nanophoton. 9(1), 093062 (Aug 07, 2015). doi:10.1117/1.JNP.9.093062
History: Received April 15, 2015; Accepted July 7, 2015
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Abstract.  Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Ahmed Fadil ; Yiyu Ou ; Teng Zhan ; Kaiyu Wu ; Dmitry Suyatin, et al.
"Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography", J. Nanophoton. 9(1), 093062 (Aug 07, 2015). ; http://dx.doi.org/10.1117/1.JNP.9.093062


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