Research Papers

Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering

[+] Author Affiliations
Xian-An Cao, Yifei Lu

West Virginia University, Department of Computer Science and Electrical Engineering, Morgantown, West Virginia 26506, United States

J. Nanophoton. 9(1), 093052 (Sep 16, 2015). doi:10.1117/1.JNP.9.093052
History: Received June 9, 2015; Accepted August 14, 2015
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Abstract.  CdSe-based nanocrystal quantum wells (QWs) were synthesized around CdS nanocrystal quantum dots and were bandgap- and strain-engineered to achieve high-efficiency short-wavelength luminescence. Tuning the CdSe QW width in the range of 1.05 to 1.58 nm has led to blue-green light emission, whose quantum yield was improved up to 48% through strain compensation by an optimized ZnS outer shell. The luminescence spectrum can be modified by adding a ZnS inner barrier layer to block charge and exciton transfer between the QW and CdS core. Strain management by adjusting the well and barrier thickness has proven critical in such a complex multilayer quantum system for obtaining high-quality nanocrystals and light emission.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Xian-An Cao and Yifei Lu
"Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering", J. Nanophoton. 9(1), 093052 (Sep 16, 2015). ; http://dx.doi.org/10.1117/1.JNP.9.093052


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