22 January 2016 Experimental study of nitrogen-doped graphene by spectroscopic and probe methods of surface analysis
Alexander Pereyaslavtsev, Maxim Rybin, Tatiana Vasilieva, Vladimir Miasnikov, Igor Sokolov
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Abstract
This work demonstrates an integrated approach for studying graphene films with various doping levels of nitrogen. The graphene films grown by a chemical vapor deposition technique were doped by treatment in ammonia radio-frequency plasma discharge. The graphene samples were investigated by x-ray photoelectron spectroscopy with a parallel registration of photoemission angular dependence. The depth-dependent changes in the valence band structure and the nitrogen peak position were recorded. The shift of valence band maximum relative to the initial value (0.13±0.04  eV) was observed using ultraviolet photoelectron spectroscopy. The dispersion and the shift of π-plasmon maximum were registered while the percentage of nitrogen atoms in two-dimensional graphene network increased.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2016/$25.00 © 2016 SPIE
Alexander Pereyaslavtsev, Maxim Rybin, Tatiana Vasilieva, Vladimir Miasnikov, and Igor Sokolov "Experimental study of nitrogen-doped graphene by spectroscopic and probe methods of surface analysis," Journal of Nanophotonics 10(1), 012521 (22 January 2016). https://doi.org/10.1117/1.JNP.10.012521
Published: 22 January 2016
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Cited by 3 scholarly publications.
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KEYWORDS
Graphene

Nitrogen

Spectroscopy

Photoemission spectroscopy

Chemical species

Doping

Electron beams

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