Research Papers

Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

[+] Author Affiliations
Kaikai Xu

University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, No. 4, Section 2, North Jianshe Road, Chengdu 610054, China

Zhengyuan Zhang, Zhengping Zhang

Sichuan Solid-State Circuit Research Institute, Chongqing 400060, China

J. Nanophoton. 10(1), 016002 (Jan 27, 2016). doi:10.1117/1.JNP.10.016002
History: Received June 7, 2015; Accepted December 4, 2015
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Abstract.  A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p–n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Kaikai Xu ; Zhengyuan Zhang and Zhengping Zhang
"Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices", J. Nanophoton. 10(1), 016002 (Jan 27, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.016002


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