Research Papers

Use of radiation intensity dependence on excitation level for the analysis of surface plasmon resonance effect on ZnO luminescence

[+] Author Affiliations
Stepan Rumyantsev, Charus Briskina, Mikhail Ryzhkov, Valery Markushev

Kotel’nikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences, Mokhovaya Street 11–7, Moscow 125009, Russia

Andrey Tarasov

Kotel’nikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences, Mokhovaya Street 11–7, Moscow 125009, Russia

Moscow Institute of Physics and Technology (State University), Institutskiy per. 9, Dolgoprudny, Moscow Region 141700, Russia

Andrey Lotin

The Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya Street, Shatura, Moscow Region 140700, Russia

J. Nanophoton. 10(1), 016001 (Jan 27, 2016). doi:10.1117/1.JNP.10.016001
History: Received September 13, 2015; Accepted December 8, 2015
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Abstract.  For the analysis of ZnO luminescence, a set of rate equations (SRE) is proposed. It contains a set of parameters that characterize processes participating in luminescence: zone–zone excitation, excitons formation and recombination, formation and disappearance of photons, surface plasmons (SP), and phonons. It is shown that experimental ZnO microstructure radiation intensity dependence on photoexcitation levels can be approximated by using SRE. This approach was applied for the analysis of ZnO microfilm radiation with different thicknesses of Ag island film covering. It was revealed that the increase of cover thickness leads to an increase of losses and a decrease of the probability of photon-to-SP conversion. In order to take into account visible emission, rate equations for level populations in the bandgap and for corresponding photons and SPs were added to the SRE. By using such an SRE, it is demonstrated that the form of visible luminescence intensity dependence on excitation level (P) like P1/3, as obtained elsewhere, is possible only if donor–acceptor pairs exist. The proposed approach was also applied for consideration of experimental results obtained in several papers taking into account the interpretation of these results based on assumptions about the transfer of electrons from the defect level in the ZnO bandgap to metal and then to the conduction band.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Stepan Rumyantsev ; Andrey Tarasov ; Charus Briskina ; Mikhail Ryzhkov ; Valery Markushev, et al.
"Use of radiation intensity dependence on excitation level for the analysis of surface plasmon resonance effect on ZnO luminescence", J. Nanophoton. 10(1), 016001 (Jan 27, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.016001


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