Special Section on Optics, Spectroscopy, and Nanophotonics of Quantum Dots

In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy

[+] Author Affiliations
Jihene Zribi, Denis Morris, Vincent Aimez, Richard Ares

Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystèmes (LN2)–CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique, Sherbrooke, J1K OA5 Quebec, Canada

Bouraoui Ilahi, Amal Aldhubaib

King Saud University, College of Sciences, Department of Physics and Astronomy, P.O. Box No. 2455, 11451 Riyadh, Saudi Arabia

J. Nanophoton. 10(3), 033502 (Feb 18, 2016). doi:10.1117/1.JNP.10.033502
History: Received December 3, 2015; Accepted January 29, 2016
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Abstract.  This work reports on a chemical beam epitaxy growth study of InGaAs/GaAs quantum dots (QDs) engineered using an in-situ indium-flush technique. The emission energy of these structures has been selectively tuned over 225 meV by varying the dot height from 7 to 2 nm. A blueshift of the photoluminescence (PL) emission peak and a decrease of the intersublevel spacing energy are observed when the dot height is reduced. Numerical investigations of the influence of dot structural parameters on their electronic structure have been carried out by solving the single-particle one-band effective mass Schrödinger equation in cylindrical coordinates, for lens-shaped QDs. The correlation between numerical calculations and PL results is used to better describe the influence of the In-flush technique on both the dot height and the dot composition.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Jihene Zribi ; Denis Morris ; Bouraoui Ilahi ; Amal Aldhubaib ; Vincent Aimez, et al.
"In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy", J. Nanophoton. 10(3), 033502 (Feb 18, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.033502


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