Special Section on Advances in Nanostructured Thin Films

Highly transparent conducting CdO thin films by radiofrequency magnetron sputtering for optoelectronic applications

[+] Author Affiliations
Saheer Cheemadan, Amiruddin Rafiudeen, Maniyeri Chandroth Santhosh Kumar

National Institute of Technology, Department of Physics, Optoelectronic Materials and Devices Laboratory, Tiruchirappalli, Tamil Nadu 620 015, India

J. Nanophoton. 10(3), 033007 (Mar 22, 2016). doi:10.1117/1.JNP.10.033007
History: Received December 15, 2015; Accepted February 26, 2016
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Abstract.  Cadmium oxide (CdO) thin films with low electrical resistivity and higher transparency have been deposited by radiofrequency (RF) magnetron sputtering on glass substrates. Sputtering process was carried out at RF power of 40 W and with varying substrate temperatures. The structural, morphological, electrical, and optical properties of the deposited films are investigated. The structural properties reveals that the as-deposited CdO films shows preferential orientation along (111) plane exhibiting face centered cubic structure. The surface morphology shows that all the films possess well defined grain boundaries with high uniformity. CdO samples deposited at substrate temperature of 150°C with RF power of 40 W exhibits above 95% transparency within the visible wavelength with lower electrical resistivity value in the order of 105  Ω·cm. The Raman spectroscopy analysis reveals the possible modes present in CdO films and its dependence on substrate temperature. The comparatively high value of the figure of merit for the optimum sample of CdO deposited at 150°C indicates that these films are suitable for optoelectronic device applications.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Saheer Cheemadan ; Amiruddin Rafiudeen and Maniyeri Chandroth Santhosh Kumar
"Highly transparent conducting CdO thin films by radiofrequency magnetron sputtering for optoelectronic applications", J. Nanophoton. 10(3), 033007 (Mar 22, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.033007


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