Research Papers

Photoabsorption by the electronic subsystem of semiconductor quantum dots

[+] Author Affiliations
Sergey V. Sakhno

Moscow Institute of Physics and Technology, 9 Institutsky Line, Dolgoprudnyi, Moscow 141700, Russia

Mordko A. Kozhushner, Vladimir S. Posvyanskii

Semenov Institute of Chemical Physics, Russian Academy of Sciences, 4 Kosygin Street, Moscow 119991, Russia

Leonid I. Trakhtenberg

Moscow Institute of Physics and Technology, 9 Institutsky Line, Dolgoprudnyi, Moscow 141700, Russia

Semenov Institute of Chemical Physics, Russian Academy of Sciences, 4 Kosygin Street, Moscow 119991, Russia

SSC RF Karpov Institute of Physical Chemistry, 10 Vorontsovo Pole Street, Moscow 105064, Russia

J. Nanophoton. 10(2), 026018 (May 23, 2016). doi:10.1117/1.JNP.10.026018
History: Received December 20, 2015; Accepted April 22, 2016
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Abstract.  The cross section for photoabsorption by a semiconductor quantum dot has been calculated with the previously obtained densities of electrons in the surface traps, conduction electrons, and electrons in unionized impurities. It has been found that the total photoabsorption cross section has two characteristic maxima corresponding to absorption by conduction electrons and by electrons in traps in the bulk of the quantum dot. The contribution of electrons in traps on the surface of the quantum dot is small and manifests itself only in a relatively short-wavelength range of the spectrum.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Sergey V. Sakhno ; Mordko A. Kozhushner ; Vladimir S. Posvyanskii and Leonid I. Trakhtenberg
"Photoabsorption by the electronic subsystem of semiconductor quantum dots", J. Nanophoton. 10(2), 026018 (May 23, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.026018


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