Research Papers

Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

[+] Author Affiliations
Aviya Bennett, Avraham Chelly, Zeev Zalevsky

Bar-Ilan University, Faculty of Engineering, Ramat Gan 5290002, Israel

Avi Karsenty, Ilan Gadasi, Zvi Priel, Yaakov Mandelbaum

Lev Academic Center (JCT), Department of Applied Physics/Electro-Optics Engineering, Faculty of Engineering, 21 Havaad Haleumi Street, Jerusalem 9116001, Israel

Tiecheng Lu

Sichuan University, College of Physical Science and Technology, Department of Physics, Chengdu 610065, China

Issai Shlimak

Bar-Ilan University, Department of Physics, Ramat Gan 5290002, Israel

J. Nanophoton. 10(3), 036001 (Jul 06, 2016). doi:10.1117/1.JNP.10.036001
History: Received March 13, 2016; Accepted June 15, 2016
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Abstract.  The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Aviya Bennett ; Avraham Chelly ; Avi Karsenty ; Ilan Gadasi ; Zvi Priel, et al.
"Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures", J. Nanophoton. 10(3), 036001 (Jul 06, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.036001


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