Research Papers

Optical field dissipation in heterostructures for nanophotovoltaic devices

[+] Author Affiliations
Carlos Villa-Angulo, José R. Villa-Angulo, Rafael Villa-Angulo

Universidad Autónoma de Baja California, Instituto de Ingeniería, Avenida de la Normal s/n, Insurgentes, Mexicali, Baja California 21280, México

Daniel Sauceda-Carvajal

Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana, No. 3918, Zona Playitas, Ensenada, Baja California 22860, México

J. Nanophoton. 10(4), 046001 (Oct 06, 2016). doi:10.1117/1.JNP.10.046001
History: Received May 13, 2016; Accepted September 15, 2016
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Abstract.  In heterostructures for nanophotovoltaic (NPV) devices, a number of layers are concatenated in a multilayer configuration. In the analysis of a multilayer configuration, it is commonly assumed that the intensity of the optical field has an exponential decrease along the direction of propagation inside the structure. Effects such as reflections and interference are neglected. These neglected effects become especially important ones once the layer dimension reaches several nanometers. At this width regimen, quantum effects are present since layers are thin compared with the penetration depth and the wavelength of the incident light. Quantum effects influence photon absorption and affect the optical field dissipation that controls electron-hole pairs generation. Hence, dissipation of the optical field inside an NPV device is an important aspect to consider in studying and determining performance properties. We employed the one-dimensional optical transfer matrix theory and the quantum well theory to analyze the optical field dissipation in the active layer of heterostructures for NPV devices. Illumination of 100  mW·cm2 air mass 1.5 global (AM 1.5G) standard was considered for the analysis. The study was extended to low-dimensional heterostructures of the binary compound CdS/CdSe/CdS, the ternary compound Ga0.9Al0.1As/GaAs/Ga0.9Al0.1As, and the quaternary compound In0.85Ga0.15As0.30P0.70/In0.7Ga0.3As0.6P0.4/In0.85Ga0.15As0.30P0.70.

© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Carlos Villa-Angulo ; Daniel Sauceda-Carvajal ; José R. Villa-Angulo and Rafael Villa-Angulo
"Optical field dissipation in heterostructures for nanophotovoltaic devices", J. Nanophoton. 10(4), 046001 (Oct 06, 2016). ; http://dx.doi.org/10.1117/1.JNP.10.046001


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