Vertical cavity surface emitting laser (VCSEL) plays a vital role in optical network. The present investigation reports the performance comparison of the modeling of single-mode VCSELs at room temperature for continuous wave operation. VCSEL for the study consists of InGaAsP-based cavity or active region sandwiched between GaAs/AlGaAs top mirror and GaAs/AlAs bottom mirrors with the aim of increasing the power conversion efficiency (PCE), lasing power, and decreasing the threshold current. It is observed that VCSELs with lower diameter are most suitable to achieve energy-efficient operation. The PCE obtained is for the proposed single-mode VCSELs. The proposed VCSELs are suitable for short-reach optical interconnects such as chip-to-chip and board-to-board communication in high-performance computers.