Research Papers

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

[+] Author Affiliations
Chijioke I. Oriaku

Sheffield Hallam University, Materials and Engineering Research Institute, Sheffield, United Kingdom

Michael Okpara University of Agriculture, Department of Physics, Umudike, Nigeria

Timothy J. Spencer, Mauro F. Pereira

Sheffield Hallam University, Materials and Engineering Research Institute, Sheffield, United Kingdom

Xu Yang, Jorge P. Zubelli

Instituto de Matemática Pura e Aplicada, Rio de Janeiro, Brazil

J. Nanophoton. 11(2), 026005 (May 03, 2017). doi:10.1117/1.JNP.11.026005
History: Received February 5, 2017; Accepted March 29, 2017
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Abstract.  We calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5  μm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Chijioke I. Oriaku ; Timothy J. Spencer ; Xu Yang ; Jorge P. Zubelli and Mauro F. Pereira
"Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors", J. Nanophoton. 11(2), 026005 (May 03, 2017). ; http://dx.doi.org/10.1117/1.JNP.11.026005


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