Special Section on Quantum Dots

Quantum-dot infrared photodetectors: a review

[+] Author Affiliations
Adrienne D. Stiff-Roberts

Electrical and Computer Engineering, Duke University, Box 90291, Durham, NC 27708-0291

J. Nanophoton. 3(1), 031607 (April 14, 2009). doi:10.1117/1.3125802
History: Received September 4, 2008; Revised April 2, 2009; Accepted April 6, 2009; April 14, 2009; Online April 14, 2009
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Abstract

Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (⩾150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.

© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Adrienne D. Stiff-Roberts
"Quantum-dot infrared photodetectors: a review", J. Nanophoton. 3(1), 031607 (April 14, 2009). ; http://dx.doi.org/10.1117/1.3125802


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