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1 April 2009 Quantum-dot infrared photodetectors: a review
Adrienne D. Stiff-Roberts
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Journal of Nanophotonics, Vol. 3, Issue 1, 031607 (April 2009). https://doi.org/10.1117/1.3125802
Abstract
Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.
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Adrienne D. Stiff-Roberts "Quantum-dot infrared photodetectors: a review," Journal of Nanophotonics 3(1), 031607 (1 April 2009). https://doi.org/10.1117/1.3125802
Published: 1 April 2009
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Cited by 90 scholarly publications and 5 patents.
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KEYWORDS
Photodetectors
Absorption
Infrared imaging
Gallium arsenide
Infrared radiation
Quantum dots
Heterojunctions
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