Special Section: Selected Papers from the INFN-LNF Conference on Nanoscience and Nanotechnology

Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT

[+] Author Affiliations
Y. M. Meziani

Dept. de Fisica Aplicada, Univ. de Salamanca, Salamanca, E-37008 Spain

T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu

Research Institute of Electrical Communication, Tohoku University, Sendai, 980-8577 Japan

W. Knap

Groupe d'Etude des Semiconducteurs, Univ. Montpellier 2 and CNRS, UMR5650, Montpellier 34095 France

T. Otsuji

Research Institute of Electrical Communication, Tohoku Univ., Sendai, 980-8577 Japan

E. Sano

RCIQE, Hokkaido University, Sapporo, 060-8628 Japan

G. M. Tsymbalov, V. V. Popov

Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Saratov, 410019 Russia

J. Nanophoton. 3(1), 031980 (October 31, 2009). doi:10.1117/1.3266497
History: Received July 23, 2009; Revised October 7, 2009; Accepted October 8, 2009; October 31, 2009; Online October 31, 2009
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Abstract

We investigated the emission of terahertz radiation from a doubly interdigitated grating gates high electron mobility transistor. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4 K Silicon bolometer under the vacuum. The observed emission was explained as due to the excitation of the plasma waves by means of hot 2D plasmons. We also investigated the optical stimulation of the plasma waves by subjecting the device to a CW 1.5 μm laser beam. Dependence of the emission on the gate bias (i.e. on electron density) was observed and interpreted as due to the self oscillation of the plasma waves.

© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Y. M. Meziani ; T. Nishimura ; H. Handa ; H. Tsuda ; T. Suemitsu, et al.
"Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT", J. Nanophoton. 3(1), 031980 (October 31, 2009). ; http://dx.doi.org/10.1117/1.3266497


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