Special Section: Selected Papers from the INFN-LNF Conference on Nanoscience and Nanotechnology

Selective growth of InAs quantum dots on SiO2-masked GaAs

[+] Author Affiliations
F. Arciprete, E. Placidi, F. Pattella, M. Fanfoni, A. Balzarotti

Dipartimento di Fisica, Universita` di Roma Tor Vergata, Via dell Ricerca Scientifica, Roma, 00133 Italy

A. Vinattieri, L. Cavigli, M. Abbarchi, M. Gurioli

Dipartimento di Fisica, Universita` Firenze, Via G. Sansone 1, Sesto Fiorentino, 59100 Italy

L. Lunghi, A. Gerardino

Istituto di Fotonica e Nanotecnologie del C.N.R, Via Cineto Romano 42, Roma, 00156 Italy

J. Nanophoton. 3(1), 031995 (October 31, 2009). doi:10.1117/1.3266494
History: Received July 24, 2009; Revised August 12, 2009; Accepted August 20, 2009; October 31, 2009; Online October 31, 2009
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Abstract

We investigated on the growth, by molecular beam epitaxy, of InAs quantum dots on nanoscale areas of the GaAs(001) surface defined by an e-beam lithographed SiO2 mask. The selective self-assembling of the InAs dots inside the holes of the mask was obtained by a suitable choice of the growth parameters and of the pattern size. Photoluminescence from the spatially confined dots showed a blue-shifted emission but a radiative decay comparable to that of dots nucleated on the extended GaAs surface.

© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

F. Arciprete ; E. Placidi ; F. Pattella ; M. Fanfoni ; A. Balzarotti, et al.
"Selective growth of InAs quantum dots on SiO2-masked GaAs", J. Nanophoton. 3(1), 031995 (October 31, 2009). ; http://dx.doi.org/10.1117/1.3266494


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