Spatial Characterization Of Semiconductors Using 'Laser Beam Induced Current (LBIC)'

J. Bajaj; L. O. Bubulac; P. R. Newman; W. E. Tennant

doi:10.1117/12.940904

22 April 1987 Spatial Characterization Of Semiconductors Using 'Laser Beam Induced Current (LBIC)'

J. Bajaj, L. O. Bubulac, P. R. Newman, W. E. Tennant

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940904
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

An optical analog of Electron Beam Induced Current (EBIC) technique called laser beam induced current (LBIC) has been developed and utilized to obtain maps of electrically active defects in semiconductor materials. We have demonstrated the use of LBIC for spatial evaluation of LPE HgCdTe and for characterizing HgCdTe p-n junction detector arrays, in a non-destructive way without making any electrical contacts to individual detector elements.

Citation Download Citation

J. Bajaj, L. O. Bubulac, P. R. Newman, and W. E. Tennant "Spatial Characterization Of Semiconductors Using 'Laser Beam Induced Current (LBIC)'", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940904

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