High-brightness lasers on silicon by beam combining

Eric J. Stanton; Alexander Spott; Nicolas Volet; Michael L. Davenport; John E. Bowers

doi:10.1117/12.2252310

20 February 2017 High-brightness lasers on silicon by beam combining

Eric J. Stanton, Alexander Spott, Nicolas Volet, Michael L. Davenport, John E. Bowers

Proceedings Volume 10108, Silicon Photonics XII; 101080K (2017) https://doi.org/10.1117/12.2252310
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

High-brightness lasers are widely used in fields such as spectroscopy, infrared countermeasures, free-space communication, and industrial manufacturing. Integration of a broad-band, multi-spectral laser is made possible by heterogeneously integrating multiple gain materials on one silicon (Si) substrate chip. A single multi-spectral output with high beam quality can be achieved by wavelength beam combining in multiple stages: within the gain bandwidth of each laser material and then coarsely combining each spectral band to a single output waveguide. To make power scaling feasible with this system, heterogeneously integrated lasers spanning the near- to the mid-infrared with corresponding low-loss wavelength beam combining elements on chip must be demonstrated. In this work, a review of multi-spectral lasers integrated on Si is presented and various waveguide materials are discussed for spanning the visible to the mid-infrared. Recent work integrating 2.0μm diode and 4.8μm quantum cascade lasers on Si extend the previously available 1.3μm and 1.5μm diode lasers on Si to the mid-infrared. Spectral beam combining elements for spanning the visible to the mid-infrared with low loss are discussed.

Conference Presentation

Citation Download Citation

Eric J. Stanton, Alexander Spott, Nicolas Volet, Michael L. Davenport, and John E. Bowers "High-brightness lasers on silicon by beam combining", Proc. SPIE 10108, Silicon Photonics XII, 101080K (20 February 2017); https://doi.org/10.1117/12.2252310

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