Time-resolved photoluminescence spectra of InGaN epilayer

Wei Li; Wei Ying Wang

doi:10.1117/12.2314701

5 March 2018 Time-resolved photoluminescence spectra of InGaN epilayer

Wei Li, Wei Ying Wang

Proceedings Volume 10710, Young Scientists Forum 2017; 107100R (2018) https://doi.org/10.1117/12.2314701
Event: Young Scientists Forum 2017, 2017, Shanghai, China

Abstract

InGaN epitaxial layer has been studied by means of temperature dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). The PL peak energy was fitted by a thermal activation and thermal transfer model, a fast carriers transfer time was obtained. A small redshift with increasing time was observed at low temperature in the TRPL spectra, and the redshift was enhancing with increasing temperature. These behaviors are caused by a change in the carrier dynamics with increasing temperature due to the carriers transferring in the localized states in InGaN eplayer.

Citation Download Citation

Wei Li and Wei Ying Wang "Time-resolved photoluminescence spectra of InGaN epilayer", Proc. SPIE 10710, Young Scientists Forum 2017, 107100R (5 March 2018); https://doi.org/10.1117/12.2314701

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