The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots

Debabrata Das; Manas Ranjan Mantri; Debiprasad Panda; Sritoma Paul; Shubham Mondal; Amol V. Pansare; Subhananda Chakrabarti

doi:10.1117/12.2530898

9 September 2019 The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol V. Pansare, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 11085, Low-Dimensional Materials and Devices 2019; 110851O (2019) https://doi.org/10.1117/12.2530898
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Epitaxially grown III-As nanostructures, like quantum well (QW)/ quantum dot (QD) have already been scrutinized rigorously and incorporated into various devices, like light-emitting diode (LED), laser, Photodetector, solar cell, etc. Most of them use buried QW/QD heterostructure, where the as-grown nanostructures are capped with various combination of thick (In/Ga/Al)As matrix. In contrary, near-surface nanostructures have very less attention owing to additional surface states. However, these near-surface nanostructures have the potential to communicate with the external world. Therefore, it might act as a confined channel, which can be probed externally. Assertively, these near -surface nanostructures have immense potential to act as sensors. Before that, we need to passivate the surface states to hold the best communication with the outer environment. In the present study, we have used Thiourea as a source of sulfur and show the effect of passivation in terms of improved luminescence behavior. Near-surface GaAs/In_0.15Ga_0.85As/GaAs quantum well and self-assembled GaAs/InAs/GaAs SK quantum dots are grown on GaAs wafer through molecular beam epitaxy. The effective thickness of the top GaAs capping layer has been kept around eight nanometers and twelve nanometers to keep the nanostructure (QW/QD) very close to the surface. As grown samples have shown very poor photoluminescence peaks and increased by few orders after passivation. Pre-etching followed by sulfur passivation has shown the best enhancement of luminescence intensity.

Citation Download Citation

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol V. Pansare, and Subhananda Chakrabarti "The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots", Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 110851O (9 September 2019); https://doi.org/10.1117/12.2530898

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Heterojunctions

Nanostructures

Gallium arsenide

Luminescence

Gallium

Quantum dots

Show All Keywords

Keywords/Phrases

Search In:

Publication Years