Optical gain in Er doped GaN multiple quantum wells

Vinh X. Ho; Brendan Ryan; Jiarong R Cui; Prashant Pradhan; Nguyen Q. Vinh

doi:10.1117/12.2567850

9 September 2020 Optical gain in Er doped GaN multiple quantum wells

Vinh X. Ho, Brendan Ryan, Jiarong R Cui, Prashant Pradhan, Nguyen Q. Vinh

Proceedings Volume 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII; 114671Q (2020) https://doi.org/10.1117/12.2567850
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Driven by the strong need for cheap and integrable Si-based optoelectronic devices for a wide range of applications, continuing endeavors have been made to develop structures for light emission, modulation, and detection in this material system. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN/AlN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm^-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.

Conference Presentation

Citation Download Citation

Vinh X. Ho, Brendan Ryan, Jiarong R Cui, Prashant Pradhan, and Nguyen Q. Vinh "Optical gain in Er doped GaN multiple quantum wells", Proc. SPIE 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, 114671Q (9 September 2020); https://doi.org/10.1117/12.2567850

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