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4 October 2020 SiGe photonic circuits for mid IR spectroscopy
Miguel Montesinos-Ballester, Qiankun Liu, Lucas Deniel, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, David Bouville, Andrea Barzaghi, Carlos Ramos, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
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Proceedings Volume 11577, Emerging Applications in Silicon Photonics; 1157704 (2020) https://doi.org/10.1117/12.2583051
Event: SPIE Photonex and Vacuum Expo, 2020, Online Only
Abstract
Mid-infrared (mid-IR) spectroscopy is a nearly universal way to identify chemical and biological substances, as most of the molecules have their vibrational and rotational resonances in the mid-IR wavelength range. The development of silicon-based mid-IR photonic circuits has recently gained a lot of attention. Among the different materials available in silicon photonics, germanium (Ge) and silicon-germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge extending up to 15 µm. In this work we will review recent results in the development of photonics circuit based on Ge-rich SiGe waveguides.
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Miguel Montesinos-Ballester, Qiankun Liu, Lucas Deniel, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, David Bouville, Andrea Barzaghi, Carlos Ramos, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini "SiGe photonic circuits for mid IR spectroscopy", Proc. SPIE 11577, Emerging Applications in Silicon Photonics, 1157704 (4 October 2020); https://doi.org/10.1117/12.2583051
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KEYWORDS
Infrared spectroscopy
Photonic integrated circuits
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