Charge build-up, intrinsic bistability, and magnetic field effects in double-barrier heterostructures

Walter Poetz

doi:10.1117/12.20724

1 October 1990 Charge build-up, intrinsic bistability, and magnetic field effects in double-barrier heterostructures

Walter Poetz

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20724
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

A theoretical investigation of the influence of longitudinal magnetic fields on the charge build-up in double barrier tunneling structures is presented. We find that both the peak current and the hysteresis in the I-V curve can be modulated by variation of the strength of the magnetic field.

Citation Download Citation

Walter Poetz "Charge build-up, intrinsic bistability, and magnetic field effects in double-barrier heterostructures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20724

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