Li-doped IrO2/Si heterojunctions for CMOS-integrated optoelectronics

Abdullah Alquwayzani; Laurentiu Braic; Mohamed N. Hedhili; Tien Khee Ng; Nasir Alfaraj; Boon S. Ooi

doi:10.1117/12.3001163

15 March 2024 Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics

Abdullah Alquwayzani, Laurentiu Braic, Mohamed N. Hedhili, Tien Khee Ng, Nasir Alfaraj, Boon S. Ooi

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288702 (2024) https://doi.org/10.1117/12.3001163
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The heterojunction of polycrystalline Li-doped IrO₂, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive x-ray spectroscopy mapping confirmed the films’ composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Abdullah Alquwayzani, Laurentiu Braic, Mohamed N. Hedhili, Tien Khee Ng, Nasir Alfaraj, and Boon S. Ooi "Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288702 (15 March 2024); https://doi.org/10.1117/12.3001163

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