Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation

M. Moin

doi:10.1117/12.48128

1 December 1991 Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation

M. Moin

Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48128
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation

Abstract

The heating of a layer of semiconductors (Ge, Si, GaAs) was studied as dependent on the energy density of strongly-absorbed laser light using the monitoring of the layer's thermal radiation. The heating is shown to change essentially because of the redistribution of electron- hole plasma generated by the laser and because, with production, annealing or the initial presence of radiationless recombination centers.

Citation Download Citation

M. Moin "Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); https://doi.org/10.1117/12.48128

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