Infrared photodetector based on the photofluxonic effect in superconducting thin films

Alan M. Kadin; Michael Leung; Andrew D. Smith; James M. Murduck

doi:10.1117/12.45605

1 July 1991 Infrared photodetector based on the photofluxonic effect in superconducting thin films

Alan M. Kadin, Michael Leung, Andrew D. Smith, James M. Murduck

Proceedings Volume 1477, Superconductivity Applications for Infrared and Microwave Devices II; (1991) https://doi.org/10.1117/12.45605
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

The authors have recently proposed a new nonbolometric mechanism for detection of infrared photons in superconducting thin films, in which a photon nucleates the formation of a vortex- antivortex pair. This model predicts a limiting voltage responsivity of 1/(2ef), where f is the frequency of the radiation. Measurements on ultrathin NbN films at 4 K are reported which provide further evidence for this 'photofluxonic effect.' For approximately equals 0.1 (mu) W of red light (0.6 micrometers ), a responsivity of 6000 V/W of absorbed light has been measured, in agreement with the predictions. This response continues out to frequencies greater than 100 kHz, and is 1000 times greater than expected for a bolometric response. Preliminary measurements with 20 micrometers infrared radiation also agree with this picture. Voltage noise in the absence of light was less than 1 nV/(root)Hz, and was consistent with single-fluxon shot noise. Similar performance should also be possible using high-temperature superconductors. Some considerations for a fast, sensitive infrared detector based on these principles are presented.

Citation Download Citation

Alan M. Kadin, Michael Leung, Andrew D. Smith, and James M. Murduck "Infrared photodetector based on the photofluxonic effect in superconducting thin films", Proc. SPIE 1477, Superconductivity Applications for Infrared and Microwave Devices II, (1 July 1991); https://doi.org/10.1117/12.45605

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